Improved anti-ferroelectric properties enabled by high pressure annealing for eDRAM applications

The non-ideal characteristics at the interfaces of anti-ferroelectric (AFE) film and electrodes will greatly affect potential performance in way to embedded dynamic random-access memory applications. In this paper, we have proposed a high-performance AFE TiN/HfxZr1−xO2/TiN capacitor fabricated by fully atomic layer deposition grown alcohol-thermal high-pressure annealing methods that been employed avoid exposure ambient atmosphere cure interface defects induced inevitable oxidization electrodes. Due high improvement quality, capacitors based on ultra-thin (∼6 nm) show competitive performances, such as low operating voltage (−0.6/1.8 V), speed (10 ns), long retention time (103 s), endurance (1012). final benchmark demonstrates is promising candidate toward next generation high-speed high-density memory.